silicon 500 mw zener diodes microsemi scottsdale division 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503 page 1 copyright ? 2005 10-18-2005 rev c www. microsemi . com scottsdale division 1n746 thru 1n759a, -1, e3 and 1n4370 thru 1n4372a, -1, e3 do-35 1n746 - 759a, e3 1n4370- 4372a, e3 (do-35) descri pt i on appearan ce the popular 1n746 thru 1n759a and 1n4370 thru 1n4372a series of 0.5 watt zener voltage regulators provides a selection from 2.4 to 12 volts in standard 5% or 10% tolerances as well as tighter tolerances identified by different suffix letters on the part number. these glass axial-leaded do-35 zeners are also available with an internal-metallurgical-bond option by adding a -1 suffix as well as rohs compliant by adding an e3 suffix. microsemi also offers numerous other zener products to meet higher and lower power applications. do-35 (do-204ah) important: for the most current data, consult microsemis website: http://www.microsemi.com feat u res appli cat i on s / ben efi t s ? jedec registered 1n746 thru 1n759a and 1n4370 thru 1n4372a series ? internal metallurgical bond option available by adding a -1 suffix similar to military devices ? commercial surface mount equivalents available as mll746 to mll759a and mll4370 to mll4372a including the -1 suffix in the do-213aa melf style package (consult factory for others) ? rohs compliant devices available by adding e3 suffix ? do-7 glass body axial-le aded zener equ ivalents are also available ? regulates voltage over a broad operating current and temperature range ? selection from 2.4 to 12 v ? standard voltage tolerances are plus/minus 5% with a suffix identification and 10 % with no suffix ? tight tolerances available in plus or minus 2% or 1% with c or d suffix respectively ? flexible axial-lead mounting terminals ? nonsensitive to esd per mil-std-750 method 1020 ? minimal capacitance (see figure 3) ? inherently radiation hard as described in microsemi micronote 050 m ax i m u m rat i n gs m ech an i cal an d pack agi n g ? operating and storage temperature: -65 o c to +175 o c ? thermal resistance: 250 o c/w junction to lead at 3/8 (10 mm) lead length from body, or 310 o c/w junction to ambient when mounted on fr4 pc board (1 oz cu) with 4 mm 2 copper pads and track width 1 mm, length 25 mm ? steady-state power: 0.5 watts at t l < 50 o c 3/8 inch (10 mm) from body or 0.48 w at t a < 25 o c when mounted on fr4 pc board as described for thermal resistance above (also see figure1) ? forward voltage @200 ma: 1.1 volts ? solder temperatures: 260 o c for 10 s (max) ? case: hermetically sealed axial-lead glass do-35 (do-204ah) package ? terminals: tin-lead or rohs compliant annealed matte-tin plating solderable per mil- std-750, method 2026 ? polarity: cathode indicated by band. diode to be operated with the banded end positive with respect to the opposite end for zener regulation ? marking: part number ? tape & reel option: standard per eia-296 (add tr suffix to part number) ? weight: 0.2 grams ? see package dimensions on last page downloaded from: http:///
silicon 500 mw zener diodes www. microsemi . com scottsdale division 1n746 thru 1n759a, -1, e3 and 1n4370 thru 1n4372a, -1, e3 do-35 1n746 - 759a, e3 1n4370- 4372a, e3 (do-35) elect ri cal ch aract eri st i cs* @ 2 5 o c maximum reverse current i r @ v r = 1 volt nominal zener voltage v z @ i zt (note 2) zener test current i zt maximum zener impedance z zt @ i zt (note 3) @25oc @+150oc maximum zener current i zm (note 4) typical temp coeff. of zener voltage vz jedec type no. (note1) volts ma ohms a a ma %/ o c 1n4370 1n4371 1n4372 2.4 2.7 3.0 20 20 20 30 30 29 100 75 50 200 150 100 150 135 120 -.085 -.080 -.075 1n746 1n747 1n748 3.3 3.6 3.9 20 20 20 28 24 23 10 10 10 30 30 30 110 100 95 -.066 -.058 -.046 1n749 1n750 1n751 1n752 4.3 4.7 5.1 5.6 20 20 20 20 22 19 17 11 2 2 1 1 30 30 20 20 85 75 70 65 -.033 -.015 +/-.010 +.030 1n753 1n754 1n755 1n756 6.2 6.8 7.5 8.2 20 20 20 20 7 5 6 8 .1 .1 .1 .1 20 20 20 20 60 55 50 45 +.049 +.053 +.057 +.060 1n757 1n758 1n759 9.1 10.0 12.0 20 20 20 10 17 30 .1 .1 .1 20 20 20 40 35 30 +.061 +.062 +.062 * jedec registered data note 1: standard tolerance on jedec types shown is +/- 10%. suffix letter a denotes +/- 5% tolerance; suffix letter c denotes +/- 2%; and suffix letter d denotes +/- 1% tolerance. note 2: voltage measurements to be performed 20 sec onds after application of dc test current. note 3: zener impedance derived by superimposing on i zt , a 60 cps, rms ac current equal to 10% i zt (2ma ac). see micronote 202 for typical zener impedanc e variation with different operating currents. note 4: allowance has been made for the increase in v z due to z z and for the increase in junction te mperature as the unit approaches thermal equilibrium at the power dissipation of 400 mw. graph s temperature coefficient mv/ o c rated power dissipation - mw temperature coefficient t l C lead temperature ( o c) 3/8 from body or nominal zener voltage (volts) t a on fr4 pc board figure 1 figure 2 power derating curve zener voltage temperature coefficient vs. zener voltage microsemi scottsdale division page 2 copyright ? 2005 10-18-2005 rev c 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503 downloaded from: http:///
silicon 500 mw zener diodes www. microsemi . com scottsdale division 1n746 thru 1n759a, -1, e3 and 1n4370 thru 1n4372a, -1, e3 do-35 1n746 - 759a, e3 1n4370- 4372a, e3 (do-35) pack age di m en si on s all dimensions in: inch mm figure 3 capacitance vs. zener voltage (typical) microsemi scottsdale division page 3 copyright ? 2005 10-18-2005 rev c 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503 downloaded from: http:///
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